Effect of Electron Scattering on Second Derivative Ballistic Electron Emission Spectroscopy in AuyGaAsyAlGaAs Heterostructures
نویسندگان
چکیده
We present a quantitative study of the second voltage derivative (SD) of ballistic electron emission spectra of AuyGaAsyAlGaAs heterostructures to probe the effect of electron scattering on these spectra. Our analysis of the SD spectra shows that strong electron scattering occurs at the nonepitaxial AuyGaAs interface, leading to an experimentally observed redistribution of current among the electron transport channels. We also show that the effects of hot-electron scattering inside the semiconductor modify the spectra and are sensitive to the heterojunction band structure, its geometry, and temperature. [S0031-9007(99)09041-9]
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